在高功率垂直腔面发射激光器制作工艺中，生长出低应力、高质量、高稳定性的SiO2介质层非常关键。我们使用高效率LaB6离子源辅助，在低放电电流条件下，在GaAs衬底上沉积了SiO2，并对退火的应力影响进行了测试。在有离子辅助沉积时，对不同生长速率、不同厚度的应力影响进行了研究，对沉积过程进行了分析。结果表明: 离子辅助沉积的SiO2薄膜的应力远小于常规工艺条件下沉积的薄膜的应力，且退火后应力变化小。

It is critical to achieve high quality and stability SiO2 barrier in making high-power semiconductor lasers, SiO2 barrier layer was grown on GaAs substrates using high efficiency LaB6 ion assisted in low current. The stress effects were tested and analyzed after annealing. The stress conditions of different thickness and different growth rates were experimentally investigated and the deposition process was analyzed. The results show that the stress of SiO2 film under the conditions of ion-assisted deposition is far less than the conventional deposition conditions. The stress of SiO2 film under the conditions of ion-assisted deposition changes smaller after annealing.