红外与毫米波学报, 2012, 31 (6): 501, 网络出版: 2012-12-24
128×128元InAs/GaSb II类超晶格红外焦平面探测器
128×128 infrared focal plane arrays based on Type-II InAs/GaSb superlattice
摘要
报道了128×128元InAs/GaSb II类超晶格红外焦平面阵列探测器的研究成果.实验采用分子束外延技术在GaSb衬底上生长超晶格材料.红外吸收区结构为13 ML(InAs)/9 ML(GaSb), 器件采用PIN结构, 焦平面阵列光敏元大小为40 μm × 40 μm.通过台面形成、侧边钝化和金属电极生长, 以及与读出电路互连等工艺, 得到了128×128面阵长波焦平面探测器.在77 K 时测试, 器件的100%截止波长为8 μm, 峰值探测率6.0×109 cmHz1/2 W-1.经红外焦平面成像测试, 探测器可得到较为清晰的成像.
Abstract
In this paper, we reported the growth and fabrication of a 128×128 infrared focal plane array detector made of type-II InAs/GaSb superlattice. The superlattice structure was grown on GaSb substrate using molecular beam epitaxy (MBE) technology. It consisted of 200 periods of 13ML(InAs)/9ML(GaSb) for longwave infrared detection. The pixel of the detector had a conventional PIN structure with a size of 40 μm×40 μm. The device fabrication process consisted of mesa etching, side-wall passivation, metallization and flip-chip hybridization with readout integrated circuit (ROIC). At 77 K, the detector had a 100% cut-off wavelength of 8.0 μm, and a peak detectivity of 6.0×109 cmHz1/2W-1. Concept proof of infrared imaging was also demonstrated with the focal plane array at liquid nitrogen temperature.
许佳佳, 金巨鹏, 徐庆庆, 徐志成, 靳川, 周易, 陈洪雷, 林春, 陈建新, 何力. 128×128元InAs/GaSb II类超晶格红外焦平面探测器[J]. 红外与毫米波学报, 2012, 31(6): 501. XU Jia-Jia, JIN Ju-Peng, XU Qing-Qing, XU Zhi-Cheng, JIN Chuan, ZHOU Yi, CHEN Hong-Lei, LIN Chun, CHEN Jian-Xin, HE Li. 128×128 infrared focal plane arrays based on Type-II InAs/GaSb superlattice[J]. Journal of Infrared and Millimeter Waves, 2012, 31(6): 501.
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