采用单能带电子有效质量近似(EMA)和波包函数近似(EFA)模型, 考虑了能带非抛物线性等高阶因素, 并利用投试法求解薛定谔方程, 计算了准确设计峰值探测波长的GaAs/AlGaAs量子阱探测器结构参数.基于计算结果, 用分子束外延(MBE)方法生长了设计峰值波长为8 μm的GaAs/AlGaAs多量子阱材料, 进而制备了单元器件, 并测试了I-V曲线、光谱响应和探测率.I-V曲线的良好对称性显示了材料生长与器件制备工艺的质量, 光谱响应曲线表明器件实际的峰值探测波长为7.96 ～7.98 μm, 与设计预期值吻合.

Using one band effective mass approximation and shooting method, optimized parameters of quantum well infrared photodetector structure were calculated. Taking into account high order effect of band nonparabolicity, the device structure with a peak detection wavelength of 8 μm were designed. Based on the calculated result, GaAs/AlGaAs multiwell material was grown. Then single-element QWIP device were fabricated and characterized. Symmetrical I-V curves showed very good quality of the material and successful process in device fabrication. Spectral responsivity exhibited peak wavelength of 7.96 and 7.98 μm, which were in excellent agreement with our designed value.