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波导内置硅块对高功率太赫兹脉冲的响应

Truncation of open boundary of 3D rectangular waveguide by CPML. High Power Laser and Particle Beams, 2005, 17(10):15571563)Responses of silicon bar fixed in waveguide to high power terahertz pulse

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摘要

利用三维电磁场时域有限差分法,对0.3~0.4 THz高功率太赫兹脉冲作用下置于矩形波导内部宽边中心的n型硅块响应规律进行了研究。通过对置入硅块前后矩形波导内电磁场分布、电压驻波比及硅块内平均电场的模拟分析,得出硅块几何尺寸和电阻率对上述物理量的响应规律,硅块长、宽、高和电阻率均会对波导内电压驻波系数产生影响,其中以高度影响最为明显;硅块内平均电场在低频段和高频段单调性不一致。最后,在优化硅块长、宽、高及电阻率的基础上,给出了一种可用于该频段高功率太赫兹脉冲直接测量的电阻探测器芯片设计方案,其相对灵敏度约为0.509 kW-1,幅度波动不超过14%,电压驻波比不大于1.34。

Abstract

Researches on responses of an ntype silicon bar fixed in a rectangular waveguide to high power terahertz pulse have been carried out for the 0.3~0.4 THz band. The distribution of electromagnetic field components, voltage standingwave ratio(VSWR) in the waveguide, and the average electric field in the ntype silicon bar is determined by means of a threedimensional finitedifference timedomain method. By adjusting several factors, such as the length, width, height and the specific resistance of the silicon bar, a novel project of a sensor that can be used as measurement device for high power terahertz pulse directly is presented. The relative sensitivity of the sensor is about 0.509 kW-1, its fluctuation is in the range of 14%, and its VSWR is no more than 1.34.

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中图分类号:O441.6;O473

DOI:10.3788/hplpb20132502.0455

所属栏目:太赫兹技术

基金项目:国家自然科学基金重点项目(61231003)

收稿日期:2012-09-18

修改稿日期:2012-11-06

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作者单位    点击查看

王雪锋:西北核技术研究所, 西安 710024解放军63655部队, 乌鲁木齐 841700
王建国:解放军63655部队, 乌鲁木齐 841700西安交通大学 电子与信息工程学院, 西安 710049
王光强:西北核技术研究所, 西安 710024
童长江1:西北核技术研究所, 西安 710024
李爽:西北核技术研究所, 西安 710024
李勇:西北核技术研究所, 西安 710024

联系人作者:王雪锋(7009725@qq.com)

备注:王雪锋(1979-),男,博士研究生,工程师,主要从事微波、太赫兹波的产生与测量研究。

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引用该论文

Wang Xuefeng,Wang Jianguo,Wang Guangqiang,Tong Changjiang,Li Shuang,Li Yong. Truncation of open boundary of 3D rectangular waveguide by CPML. High Power Laser and Particle Beams, 2005, 17(10):15571563)Responses of silicon bar fixed in waveguide to high power terahertz pulse[J]. High Power Laser and Particle Beams, 2013, 25(2): 455-460

王雪锋,王建国,王光强,童长江1,李爽,李勇. 波导内置硅块对高功率太赫兹脉冲的响应[J]. 强激光与粒子束, 2013, 25(2): 455-460

被引情况

【1】王光强,王建国,王雪锋,李爽. 过模矩形波导中硅芯片与基模亚毫米波的作用. 强激光与粒子束, 2014, 26(8): 83001--1

【2】王雪锋,王建国,王光强,李爽,熊正锋,陆希成,彭建昌西北核技术研究所, 西安 710024. 一种太赫兹脉冲探测芯片性能分析. 强激光与粒子束, 2014, 26(8): 83103--1

【3】王光强,王建国,王雪锋,李爽,曾鹏. 亚毫米波大功率脉冲探测器的初步研制. 强激光与粒子束, 2015, 27(4): 43103--1

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