缺乏高质量的硅光电接受器件一直制约着全硅光电子回路的发展。分析讨论了PERL太阳能电池的高效光电特性技术,并将其应用于硅光电二极管,设计了一种高响应度,高截止频率的硅基PIN光电二极管的器件结构,说明了该结构的技术特点与制备工艺。使用SUPREM-IV仿真器对该器件进行了模拟仿真,讨论了I层的长度与厚度对器件性能的影响。

The all-silicon optoelectronic circuit has always been hampered by the lack of high quality silicon photo receiving device. The efficient optoelectronic technologies of PERL solar cells are analyzed and applied to the Si-based photodiode described. The structure of high sensitivity, high cut-off frequency silicon PIN photodiode device is designed. The technical characteristics and processing of the structure are illustrated. The SUPREM-IV simulator is used to simulate the device. The influence of the different I-layer lengthes and thicknesses on the device performances is discussed.