以聚酰亚胺薄膜为靶子,用高电导硅作为衬底,KrF准分子激光器作为辐射光源,利用脉冲激光沉积技术制备出了类石墨薄膜,并以该薄膜为阴极对其进行了场致电子发射特性测试。当阴阳极之间产生放电即发生电形成过程之后,该薄膜的阈值电场从最初的16.9V/μm降到10.8V/μm。当电场为20V/μm时,薄膜场发射的电流密度达到了0.4mA/cm2,发射点密度达到10~3/cm2利用XPS,Raman光谱及扫描电子显微镜对该薄膜的微结构进行了测试分析。

The graphite-like films were prepared on silicon substrate by using the pulsed KrF laser ablation of a polyimide target, and the field electron emission from the film was observed. After arc forming between the graphite-like film cathode and the indium-tin-oxide (?ΤΟ) glass anode, the turn-on field of the graphite-like film decreases from 16.9 to 10.8 V/μm. The current density is 0.4 mA/cm2, and the emission sites density is in order of 106 /cm2 at the applied field of 20 V/μm. The morphology and the structure of the graphite-like film were measured by using Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). It indicates that there exist graphite-like clusters in the deposition film, which we named as the graphite-like film. The surface structures of the film before and after the field emission measurements were investigated by scanning electron microscopy (SEM).