红外技术, 2013, 35 (1): 9, 网络出版: 2013-02-04
77 K低温下MOSFET非固有电容参数提取研究
Parameter Extraction of Extrinsic Capacitance of MOSFET at 77 K Cryogenic Temperature
摘要
77 K低温参数是制冷型碲镉汞红外焦平面探测器读出电路设计与精确仿真的关键点之一。通过研究 MOSFET非固有电容的特性, 并基于 BSIM3通用模型对电容的描述, 在 77 K低温下进行测试提取, 得到了相关的模型参数。嵌入 SPICE软件仿真对比, 证明了参数的准确性。
Abstract
Cryogenic parameter in 77K is a key point of cooled MCT infrared detector readout IC design. This paper is a research of characteristic of extrinsic capacitance in MOSFET. Based on the description of capacitance in BSIM3 model, the parameters are measured and extracted at cryogenic temperature. And the parameters are proved accurate by simulate in SPICE.
胡彦博, 李煜, 白丕绩, 李敏, 刘会平, 李所英. 77 K低温下MOSFET非固有电容参数提取研究[J]. 红外技术, 2013, 35(1): 9. HU Yan-bo, LI Yu, BAI Pi-ji, LI Min, LIU Hui-ping, LI Suo-yin. Parameter Extraction of Extrinsic Capacitance of MOSFET at 77 K Cryogenic Temperature[J]. Infrared Technology, 2013, 35(1): 9.
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