中国激光, 2002, 29 (s1): 491, 网络出版: 2013-02-23
热氧化制备纳米氧化锌薄膜的光致发光特性研究
Study of Luminescence Characterization on Nanocrystalline ZnO Thin Films Prepared by Thermal Oxidation of ZnS Thin Films
纳米 热氧化 薄膜 光致发光 近带边发射 自由激子 nanometer thermal oxidation thin film photoluminescence (PL) near-band-edge (NBE) emission free exciton
摘要
报道了利用低压金属有机汽相外延(LP-MOCVD)工艺首先在硅(n-Si衬底上生长硫化锌(ZnS)薄膜,然后将 硫化锌薄膜在氧气中于不同温度下进行热氧化,制备高质量的纳米氧化锌(ZnO)薄膜。X射线衍射(XRD)结果表明,氧化锌具有六角纤锌矿型结构且具有择优(002)取向。在900 ℃退火的样品的光致发光(PL)中, 观察到一束强 的380 nm紫外光致发光和相当弱的深能级发射。紫外发光强度与深能级发射强度之比是28,表明纳米ZnO薄膜的高质量结晶。
Abstract
In this paper, high quality nanocrystalline ZnO film has been prepared by using thermal oxidation of ZnS thin film, which was grown on a Si substrate by the low pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. The X-ray diffraction (XRD) patterns show that ZnO thin film has a hexagonal wurtzite structure with preferred (002) orientation. In photoluminescence (PL) measurements, a strong PL with a full width at half maximum (FWHM) of 10 nm (88 meV) around 380 nm at room temperature was observed from the samples annealed at 900 ℃. The PL intensity ratio of the UV emission to the deep-level emission is 28 at room temperature, providing evidence of the high quality of the nanocrystalline ZnO films.
张喜田, 刘益春, 马剑钢, 张吉英, 申德振, 许武, 钟国柱, 范希武. 热氧化制备纳米氧化锌薄膜的光致发光特性研究[J]. 中国激光, 2002, 29(s1): 491. ZHANG Xi-tian, LIU Yi-chun, MA Jian-gang, ZHANG Ji-ying, SHEN De-zhen, XU Wu, ZHONG Gou-zhu, Fan Xi-wu. Study of Luminescence Characterization on Nanocrystalline ZnO Thin Films Prepared by Thermal Oxidation of ZnS Thin Films[J]. Chinese Journal of Lasers, 2002, 29(s1): 491.