利用金属有机物化学气相沉积技术在蓝宝石衬底表面制备了带有p-AlGaN电子阻挡层的400 nm高性能紫光InGaN多量子阱发光二极管。制作了3种紫光LED, 分别带有不同p-AlGaN电子阻挡层结构:Al摩尔分数为9%的p-AlGaN电子阻挡层; Al摩尔分数为11%的p-AlGaN电子阻挡层; Al摩尔分数为20%的10对p-AlGaN/GaN超晶格电子阻挡层。带有高浓度Al电子阻挡层的紫光LED的光输出功率高于低浓度Al电子阻挡层的紫光LED。带有10对p-AlGaN/GaN超晶格电子阻挡层的紫光LED的光输出功率获得了极大的提高, 在20 mA注入电流时测试得到的光输出功率为21 mW。此外, 该LED同时显示了在高注入电流下接近线性的I-L特性曲线和在LED芯片表面均匀的发光强度分布。

High-performance 400 nm violet InGaN multi-quantum-wells light-emitting diodes (LED) with p-AlGaN electron blocking layer were fabricated on sapphire substrate by metal organic chemical vapor deposition technique. Different kinds of p-AlGaN electron blocking layers were grown in three violet LEDs: bulk p-AlGaN with Al mole fraction of 9%, bulk p-AlGaN with Al mole fraction of 11% and super lattice p-AlGaN/GaN with Al mole fraction of 20%. The output power of violet LED with bulk p-AlGaN(11%) is higher than the LED with bulk p-AlGaN(9%). Typically, the output power of the LED with 10 pairs of p-AlGaN/GaN super lattice electron blocking layer has been greatly improved. A LED with an output power of 21 mW at an injection current of 20 mA is achieved. In additional, the LED also shows an almost linear I-L characteristics at high injection current and uniform intensity mapping on LED chip surface.