现代显示, 2013, 24 (1-2): 8, 网络出版: 2013-03-01
反向偏压调制下I型阱结构体系光致发光特性的研究
Study on the Photoluminescence Properties of Type I Quantum Well System under Reverse Bias Modulation
摘要
实验过程中研究了8-hydroxyq-uinoline aluminum(Alq3)和2-(4-biphenylyl)-5(4-tert-butyl-phenyl)-1,3,4-oxadiazole(PBD)构成的I型有机阱结构器件在反向偏压调制下的光致发光。器件的光致发光光谱主要是Alq3的发光，不同周期数的阱结构器件在反向电场作用下，光致发光的猝灭程度不同。
Abstract
The photoluminescence of organic devices of type I quantum well structure consisting of 8-hydroxyq-uinoline aluminum (Alq3) and 2-(4-biphenylyl)-5(4-tert-butyl-phenyl)-1,3,4-oxadiazole (PBD) under reverse bias modulation have been studied. Photoluminescence spectrum of these devices is mainly about Alq3. The photoluminescence of quenching of degree of different cycle number of well structure devices, under reverse electric field modulation are different.
朱海娜, 徐征, 郑宁, 张链, 陈子健. 反向偏压调制下I型阱结构体系光致发光特性的研究[J]. 现代显示, 2013, 24(1-2): 8. ZHU Hai-na, XU Zheng, ZHENG Ning, ZHANG Lian, CHEN Zi-jian. Study on the Photoluminescence Properties of Type I Quantum Well System under Reverse Bias Modulation[J]. ADVANCED DISPLAY, 2013, 24(1-2): 8.
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