半导体光电, 2013, 34 (1): 56, 网络出版: 2013-03-05
一种850 nm氧化限制型垂直腔面发射激光器的设计
A Design of 850nm Oxide-confined VCSEL
垂直腔面发射激光器 量子阱 氧化孔径 阈值电流 斜率效率 vertical cavity surface emitting laser quantum well oxide aperture threshold current slope efficiency
摘要
采用PICS3D软件建立了850nm氧化限制型垂直腔面发射激光器(VCSEL)的仿真模型, 通过优化量子阱有源区的阱和垒的个数、合理选取分布式布拉格反射镜(DBR)的材料以及对数, 设计了一种850nm氧化限制型VCSEL。在10μm氧化孔径下, 与商用的850nm氧化限制型VCSEL相比, 其阈值电流从1.8mA降至1.5mA, 斜率效率从0.3W/A提升到0.65W/A。
Abstract
A simulation model of 850nm oxide-confined vertical cavity surface emitting lasers (VCSELs) was established by PICS3D, in which, the number of well and barrier of the active layer was optimized and the material and the number of distributed bragg reflector (DBR) were appropriately chosen. Compared with commercial 850nm oxide-confined VCSELs, the threshold current of the designed VCSEL drops from 1.8mA to 1.5mA, and the slope efficiency rises from 0.3W/A to 0.65W/A under the oxide aperture of 10μm.
丁锋, 张靖, 王品红, 田坤, 赵开梅. 一种850 nm氧化限制型垂直腔面发射激光器的设计[J]. 半导体光电, 2013, 34(1): 56. DING Feng, ZHANG Jing, WANG PingHong, TIAN Kun, ZHAO Kaimei. A Design of 850nm Oxide-confined VCSEL[J]. Semiconductor Optoelectronics, 2013, 34(1): 56.
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