采用脉冲抽运方式可显著改善光抽运垂直外腔面发射半导体激光器的热效应，大幅度提升激光器的输出功率。用有限元方法数值求解瞬态传热方程，得到激光器中温度升高的最大值随抽运脉冲的变化规律。讨论了抽运光脉冲宽度范围的选择，分析了抽运脉冲重复频率对激光器中温度升高最大值的影响作用，对抽运脉冲的时间宽度进行了优化设计。结果表明，对于基质去除型的InGaAs量子阱垂直外腔面发射激光器，抽运光脉冲的宽度介于1~10 μs时，激光器中最大温升值即明显下降；同时，抽运脉冲的重复频率应限制在50 kHz以内，以满足脉冲间隔大于激光器热弛豫时间的要求，否则激光器中会产生热量的积聚，增加最大温升值。

It has been demonstrated experimentally that pulsed pumping can significantly improve the thermal management in an optically-pumped vertical-external-cavity surface-emitting laser and upgrade the output power. In this paper, the transient heat conduction equation is solved by use of finite element method, and the maximum temperature rise in the multiple quantum wells active region of laser is focused. Based on the influences of repetition rate and pulse width of pump pulses on the maximum temperature rise, the repetition rate and pulse width of pump pulses are optimized. It can be concluded from the numerical results that, for a substrate-removed InGaAs quantum well vertical-external-cavity surface-emitting laser, the optimized pulse width is between 1 μs and 10 μs, and the optimized pulse repetition rate is no more than 50 kHz.