中国激光, 2013, 40 (4): 0402011, 网络出版: 2013-04-07   

三波长合束高亮度半导体激光光源

High Brightness Diode Laser Source Based on Three-Wavelength Multiplexing
作者单位
1 中国科学院长春光学精密机械与物理研究所, 吉林 长春 130033
2 中国科学院大学, 北京 100049
摘要
半导体激光器以其突出的优点具有广泛的应用前景,但受光束质量限制,使其很难作为直接光源应用在对功率和光束质量均有较高要求的领域。采用斜45°柱透镜阵列光束整形技术、自偏振合束技术和三波长合束技术,将3种波长的8个半导体激光阵列合束,研制出一种连续功率为500 W、电光转换效率为39.5%、光参量积为12.44 mm·mrad、亮度为42.8 MW/(cm2·sr)的半导体激光光源,可作为直接光源应用于工业和**等领域。
Abstract
Because of the prominent advantages, diode lasers have a significant prospect of application. But limited by the beam quality, it is difficult to be a direct source applied in the fields demanding for power, beam quality and brightness at the same time. The technologies of beam shaping of 45° tilted cylindrical lens, self-polarization multiplexing and three-wavelength multiplexing are employed to couple 8 bars with three wavelengths into a laser beam, and a diode laser source is developed with continuous wave (CW) power of 500 W, electro-optical conversion efficiency of 39.5%, holistic beam quality of 12.44 mm·mrad and brightness of 42.8 MW/(cm2·sr), which can be applied directly in the fields of materials processing and defense.

张俊, 彭航宇, 刘云, 秦莉, 单肖楠, 王立军. 三波长合束高亮度半导体激光光源[J]. 中国激光, 2013, 40(4): 0402011. Zhang Jun, Peng Hangyu, Liu Yun, Qin Li, Shan Xiaonan, Wang Lijun. High Brightness Diode Laser Source Based on Three-Wavelength Multiplexing[J]. Chinese Journal of Lasers, 2013, 40(4): 0402011.

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