在砷化镓样品的自发辐射现象中引入了辐射复合系数的一般概念。对于高增益砷化镓光导开关中流注的自发辐射现象，依据求简单平均值的方法和归一化条件，近似确定了平均辐射复合系数为(883)≈0.1125。导出了各辐射波长的辐射复合系数与平均辐射复合系数之间的关系，计算了辐射波长为890 nm的辐射复合系数值为η(890)=0.1182，代入该值计算的最大光输出能量与实验观察结果吻合，证明该近似方法及其结果是合理的。

The radiative recombination coefficient is introduced in spontaneous emission phenomena of GaAs samples. For the spontaneous emission phenomena of streamer in high gain GaAs photoconductive semiconductor switch (PCSS), the average radiative recombination coefficient, (883)≈0.1125, is approximately determined by the simple average method and the normalization conditions. The relationship between radiative recombination coefficients of different radiation wavelengths and the average radiative recombination coefficient is derived. The radiative recombination coefficient of 890 nm radiation, η(890)=0.1182, is calculated. The maximum optical output energy calculated by substituting the value of η(890) coincides with the result of experimental observations. This demonstrates that the approximation method and the results are reasonable.