理论分析了温度对垂直腔面发射半导体激光器(VCSEL)工作性能的影响，利用VCSEL的增益腔模失配理论设计了适用于高温环境下工作的VCSEL外延结构并对该结构进行了外延生长及工艺制备。理论分析表明，采用势垒高度大于0.25 eV的量子阱有源区结构可以缓解高温工作时器件的载流子泄漏问题。设计了室温下增益腔模偏离为11 nm的器件结构。理论分析表明，在320 K时与器件腔模对应的增益谱波长具有最大的光增益，此时器件具有最小的阈值电流。对分布式布拉格反射镜（DBR）的反射率进行了优化以进一步减小器件阈值电流。采用了一种自平坦化的台面工艺结构制作了7、9、13 μm三种不同氧化口径的器件，器件在室温下的阈值电流分别为1.95、2.53、2.9 mA，最大出光功率分别为0.31、1.11、1.04 mW，并且输出功率的高温稳定性较好。随工作温度的升高，器件阈值电流先减小后变大，在320～330 K时器件阈值达到最小值，与理论分析一致。

The situation of vertical cavity surface emitting laser (VCSEL) operating at high temperature is analyzed theoretically, and the gain-cavity mode detuning characteristics is employed to design the epitaxy structure of VCSEL. The metal-organic chemical vapor deposition (MOCVD) growth and fabrication process are carried out. The barrier height above 0.25 eV is used in the active region of VCSEL to reduce the carrier leakage at high temperature. The designed structure employs the 11-nm gain-cavity mode deviation. The highest gain appeares at about 320 K, at which the minimum threshold current of VCSEL appears. The reflectivity of distributed Bragg reflector (DBR) within VCSEL is designed to obtain the low threshold current. The self-planar mesa structure is employed to fabricate the VCSEL devices. VCSEL with oxide apertures of 7, 9, 13 μm are fabricated. The threshold currents are 1.95, 2.53, 2.9 mA, respectively, and the corresponding maximum output powers are 0.31, 1.11, 1.04 mW at room temperature. The threshold current decreases first and then increased with the temperature increases, and the minimum value appears at 320～330 K. The measured results consist well with the gain-cavity characteristics of VCSEL.