为了将变掺杂GaAs材料应用于微光像增强器，开展了透射式变掺杂GaAs光电阴极实验研究，制备了2种反转结构透射式变掺杂GaAs光电阴极。测试了玻璃粘接前后GaAs光电阴极载流子浓度变化，发现高温粘接后载流子浓度增加现象。通过测试高温激活的透射式变掺杂GaAs光电阴极发现，在450 nm～550 nm波段内，变掺杂GaAs光电阴极仍然具有较高的光谱响应。

In order to apply varied-doping GaAs material to low-light-level image intensifier, the transmission-mode varied-doping GaAs photocathode experiment was carried out and the transmission-mode varied-doping GaAs photocathodes with two inversion structures were prepared. By testing the carrier concentration change of the GaAs photocathode before and after glass bonding, it is found that the carrier concentration increases after bonding at a high temperature. Moreover, by testing the transmission-mode varied-doping GaAs photocathode of high-temperature activation, result shows that the varied-doping GaAs photocathode still has a high spectral response in the band of 450 nm ~ 550 nm.