将直径为1.5 μm的透明球形微粒(SiO2), 通过自组装的方式在ITO玻璃上形成单层分布, 采用KrF准分子激光(λ＝248 nm)进行单脉冲辐照。激光经过单层微粒在ITO薄膜表面得到增强, 在ITO上制备亚微米量级的孔状结构。通过扫描电镜(SEM)和原子力显微镜(AFM)分析评价辐照后样品表面微结构的质量, 用霍尔效应测试仪和分光光度计测试ITO的导电性和透光性。ITO上的亚微米阵列绒面结构使入射光透过率降低, 陷光作用增强。采用适当的激光能量密度(0.27～0.45 J/cm2)可在ITO上制备微孔结构, 同时不影响ITO薄膜本身优良的电学性能。而当能量密度较大时, 激光在与材料作用时产生的应力和热效应会对薄膜整体结构产生破坏, 孔状结构周围出现裂纹, 电阻率升高。

1.5 μm diameter transparent spherical particles (SiO2) are adopted to distribution a self-assembled monolayer on ITO glass. A KrF excimer laser (λ＝248 nm) single-pulse is used to irradiate. Laser is enhanced through a single particle layer to prepare submicron hole on ITO. A scanning electron microscopy (SEM) and an atomic force microscope (AFM) are used to examine the quality of the microstructure; meanwhile the conductivity and transmittance of this ITO film examined by Hall Effect tester and Photoluminescence Spectrometer. The light trapping effect is enhanced by the submicron array textured structure on ITO, so the transmittance of incident light decreased slightly after irradiation. It’s found that submicron structure can be prepared on ITO by appropriate laser energy density (0.27～0.45 J/cm2) without damaging its excellent electrical property. However, the stress and thermal effects of laser and material interaction will damage the film’s structure and properties with high energy density. The resistivity increases due to the cracks appeared around the submicron hole.