半导体光电, 2013, 34 (2): 180, 网络出版: 2013-05-24
蓝宝石上生长高质量InN单晶薄膜的研究发展
Research Progresses of High-quality InN Films Grown on Sapphire Substrate
摘要
通过介绍蓝宝石衬底上生长氮化铟(InN)单晶薄膜的发展历程, 阐述了生长该单晶薄膜的几种方法及生长过程中存在的一些问题和改进措施, 说明了生长高质量InN单晶薄膜的有效途径, 为InN的生长及应用提供了理论与技术指导。
Abstract
Based on introducing the development history of indium nitride (InN) single crystalline films growth on sapphire substrate, several problems and improvement measures in the growth process were discussed. An effective way for preparing InN single crystalline films is subsequently proposed, which provides theoretical and technical guides for the growth and applications of InN single crystalline films.
管云芳, 高芳亮, 李国强. 蓝宝石上生长高质量InN单晶薄膜的研究发展[J]. 半导体光电, 2013, 34(2): 180. GUAN Yunfang, GAO Fangliang, LI Guoqiang. Research Progresses of High-quality InN Films Grown on Sapphire Substrate[J]. Semiconductor Optoelectronics, 2013, 34(2): 180.
PDF全文
