采用激射波长为850 nm的AlGaInAs/AlGaAs梯度折射率波导分别限制增益量子阱结构的外延片，分别制备了具有锥形结构和条形结构的半导体激光器，并对比分析了两者的温度特性。结果显示，测试温度为20~70 ℃时，锥形结构器件的特征温度为164 K，远高于条形结构器件的96 K；占空比为05%（t=50 μs, f=100 Hz），1 000 mA脉冲电流注入条件下，锥形激光器和条形激光器的波长漂移系数分别为025和028 nm/K；测试温度＜50 ℃时，锥形激光器和条形激光器的光谱半高宽分别约为112和124 nm。实验结果表明：相同外延层结构条件下，锥形激光器比条形激光器拥有更高的特征温度。

Both tapered structure and broad-stripe semiconductor laser diodes were fabricated based on the AlGaAs/AlGaAs epitaxial layers with a graded-index waveguide separated confinement hetero-structure under the excited wavelength of 850 nm. The temperature characteristics of the devices were investigated and compared at the temperatures between 20 ℃ and 70 ℃. Experiments show that the measured characteristic temperature(164 K) of the tapered devices is much higher than that of the broad devices(96 K) and the wavelength-shift coefficients of the tapered and broad-stripe devices are 025 nm/K and 028 nm/K respectively under a duty cycle of 05%(t=50 μs, f=100 Hz) and a pulsed current of 1 000 mA. When the temperature is below 50 ℃, the Full Width at Half Maximums(FWHMs) of the tapered devices and the broad-stripe devices are 112 and 124 nm, respectively. These results indicate that the tapered lasers have better temperature characteristics than the broad ones with the same epitaxial structure under certain temperature conditions.