针对中心波长780 nm的商用连续波半导体激光器，使用斩波器将连续激光变为脉冲输出形式，用2400 line/mm的平面全息光栅搭建Littrow外腔将线宽压窄至0.2 nm以下。采用透镜组对线宽压窄后的半导体激光进行光束整形，半导体激光经线宽压窄和光束整形后，经透镜聚焦进长约8 mm的铷蒸气泡进行半导体泵浦碱金属激光实验。首次出光得到17.5 mW的基模线偏振铷激光; 在最新的改进实验中，半导体泵浦铷激光输出功率已达到2.8 W。

A chopper was used to change a diode bar with a center wavelength of 780 nm from continuous laser to pulsed laser, and a Littrow external cavity was build with a 2400 l/mm plane grating to narrow the linewidth of the diode laser to less than 0.2 nm. Then the diode laser was shaped by a lens group. After the linewidth narrowing and beam shaping, the laser was focused to a Rb vapor cell with a length of 8 mm. In that diode pumped alkali vapor laser system, a linearly polarized fundamental mode Rb laser with a peak power of 17.5 mW was obtained. In the latest experiment, we obtained a 2.8 W Rb laser in the improved diode pumped rubidium vapor laser system.