分析了微波对PIN限幅器的热损伤机理，基于器件物理模拟分析法，利用Sentaurus-TCAD仿真器建立了器件微波热效应模型，研究了频率为5.3，7.5，9.4 GHz的微波信号作用下，器件损伤过程中温度瞬态变化规律和瞬态温度分布规律。结果表明: PIN限幅器尖峰泄露阶段器件温度上升较快; 稳态限幅后温度上升缓慢; 临近热击穿状态，器件进入热电失控状态，峰值温度快速上升，最终器件因温度过高烧毁; PIN二极管中的I区或P区与I区之间的结边缘处，较容易烧毁。对PIN限幅器进行大功率微波注入实验，器件损伤实验结果与数值模拟结果吻合较好。

The thermal damage mechanism of PIN limiter caused by microwaves was analyzed. Based on physical simulation analysis，the device’s thermal damage physical model was established with software Sentaurus-TCAD. Transient temperature change and distribution of temperature in the process of PIN diode under injections of 5.3, 7.5 and 9.4 GHz microwave signals were studied. Simulation and experimental results show that the temperature increases rapidly in the spike leakage stage and near burnout stage, and increases slowly in the flat leakage stage. The peak temperature most likely appears in the I layer or on the edge between I layer and P layer.