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PIN限幅器微波脉冲热损伤温度特性

Characteristics of temperature during PIN limiter thermal damage caused by microwaves

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摘要

分析了微波对PIN限幅器的热损伤机理,基于器件物理模拟分析法,利用Sentaurus-TCAD仿真器建立了器件微波热效应模型,研究了频率为5.3,7.5,9.4 GHz的微波信号作用下,器件损伤过程中温度瞬态变化规律和瞬态温度分布规律。结果表明: PIN限幅器尖峰泄露阶段器件温度上升较快; 稳态限幅后温度上升缓慢; 临近热击穿状态,器件进入热电失控状态,峰值温度快速上升,最终器件因温度过高烧毁; PIN二极管中的I区或P区与I区之间的结边缘处,较容易烧毁。对PIN限幅器进行大功率微波注入实验,器件损伤实验结果与数值模拟结果吻合较好。

Abstract

The thermal damage mechanism of PIN limiter caused by microwaves was analyzed. Based on physical simulation analysis,the device’s thermal damage physical model was established with software Sentaurus-TCAD. Transient temperature change and distribution of temperature in the process of PIN diode under injections of 5.3, 7.5 and 9.4 GHz microwave signals were studied. Simulation and experimental results show that the temperature increases rapidly in the spike leakage stage and near burnout stage, and increases slowly in the flat leakage stage. The peak temperature most likely appears in the I layer or on the edge between I layer and P layer.

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中图分类号:TN385;T974

DOI:10.3788/hplpb20132507.1741

所属栏目:高功率微波

基金项目:装备预先研究课题(426050503)

收稿日期:2012-11-22

修改稿日期:2013-02-25

网络出版日期:--

作者单位    点击查看

赵振国:中国工程物理研究院 应用电子研究所, 高功率微波技术重点实验室, 四川 绵阳 621900
马弘舸:中国工程物理研究院 应用电子研究所, 高功率微波技术重点实验室, 四川 绵阳 621900
赵刚:中国工程物理研究院 应用电子研究所, 高功率微波技术重点实验室, 四川 绵阳 621900
王艳:中国工程物理研究院 应用电子研究所, 高功率微波技术重点实验室, 四川 绵阳 621900
钟龙权:中国工程物理研究院 应用电子研究所, 高功率微波技术重点实验室, 四川 绵阳 621900

联系人作者:赵振国(346788393@qq.com)

备注:赵振国(1987-),男,硕士研究生,主要从事半导体器件微波效应研究工作。

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引用该论文

Zhao Zhenguo,Ma Hongge,Zhao Gang,Wang Yan,Zhong Longquan. Characteristics of temperature during PIN limiter thermal damage caused by microwaves[J]. High Power Laser and Particle Beams, 2013, 25(7): 1741-1746

赵振国,马弘舸,赵刚,王艳,钟龙权. PIN限幅器微波脉冲热损伤温度特性[J]. 强激光与粒子束, 2013, 25(7): 1741-1746

被引情况

【1】米国浩,杜正伟,曹雷团,吴强,陈曦. 脉冲宽度对核电磁脉冲烧毁RS触发器效应的影响. 强激光与粒子束, 2014, 26(5): 53203--1

【2】张存波,王弘刚,张建德. 高电子迁移率晶体管微波损伤仿真与实验研究. 强激光与粒子束, 2014, 26(6): 63014--1

【3】赵振国,周海京,马弘舸,赵强,钟龙权. PIN限幅器电磁脉冲效应数值模拟与验证. 强激光与粒子束, 2014, 26(6): 63018--1

【4】张海,杨晓炜,江舸,徐晶. 受损限幅器的非线性效应对成像雷达的影响. 强激光与粒子束, 2015, 27(10): 103238--1

【5】赵振国,周海京,马弘舸,王艳. 微波脉冲频率与重频对限幅器热损伤效应的影响. 强激光与粒子束, 2015, 27(10): 103239--1

【6】闫 涛,李 平. 高电子迁移率晶体管放大器高功率微波损伤机理. 强激光与粒子束, 2016, 28(10): 103002--1

【7】张永战,孟凡宝,赵 刚. Ⅰ层厚度对限幅器热损伤效应的影响. 强激光与粒子束, 2017, 29(9): 93002--1

【8】王明,马弘舸. 组合脉冲内间隔对限幅器热损伤效应的影响. 强激光与粒子束, 2018, 30(6): 63002--1

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