光学学报, 2013, 33 (s1): s114003, 网络出版: 2013-06-07  

808 nm大功率半导体激光器寿命实验

Lifetime Test of 808 nm High Power Laser Diodes
作者单位
工业和信息化部电子第五研究所电子元器件可靠性物理及其应用技术重点实验室, 广东 广州 510610
摘要
为获得808 nm单巴条(bar)大功率半导体激光器寿命指标,研制了10工位大功率半导体激光器寿命实验在线监测系统,完成了3组寿命评价实验,这3组实验条件分别为温度25 ℃、电流100 A,温度50 ℃、电流100 A,温度50 ℃、电流115 A。采用线性回归分析、最小二乘法原理及拟合优度检验等统计学相关知识,获得了单bar大功率半导体激光器的功率退化模型,基此确定大功率半导体激光器的外推寿命为2.86×109次脉冲次数。同传统加速寿命评价实验方法相比,基于参数退化模型的寿命外推方法具有寿命评价时间短、准确性高的优点。
Abstract
In order to obtain the lifetime index of the single-bar 808 nm high power semicondutor laser, an on-line monitoring system under ten workspaces is set up. Subsequent lifetime tests are completed. The conditions of these tests are 25 ℃,100 A, 50 ℃,100 A and 50 ℃, 115 A, respectively. According to the linear regression analysis, the method of least squares, goodness-of-fit test and other statistical knowledge, the power degradation model is obtained. Based on this degradation model the extrapolated lifetime of cm-bars at 25 ℃ is 2.86×109 shots. This lifetime extrapolative method based on the parameter degradation model has some advantages such as short experiment time and high veracity than other traditional accelerated aging test methods.

路国光, 雷志锋, 黄云恩, 云飞. 808 nm大功率半导体激光器寿命实验[J]. 光学学报, 2013, 33(s1): s114003. Lu Guoguang, Lei Zhifeng, Huang Yun, En Yunfei. Lifetime Test of 808 nm High Power Laser Diodes[J]. Acta Optica Sinica, 2013, 33(s1): s114003.

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!