采用热蒸镀法，制备12种不同化学计量配比的GexAsySe100-x-y硫系非晶玻璃薄膜，利用中心波长为656 nm的光辐照，系统探讨了Ge-As-Se硫系玻璃薄膜的光稳定性和光致效应机理，分析了辐射光通量与折射率和能隙宽度的伸展指数函数关系。实验表明多数薄膜有明显的光致漂白或光致暗化效应，平均配位数在2.45~2.50范围内的薄膜，光辐照前后能量带隙和折射率几乎没有变化，证明了特定化学配比的红外硫卤玻璃薄膜具有很好的光稳定性，在全光通信光学器件中有很好的应用前景。

The photostability, photo-bleaching and photo-darkening behavior of twelve film samples of Ge-As-Se thin films with different chemical compositions are investigated when the films are exposed at irradiation of 656 nm by thermal evaporation deposition. The relationship between irradiation flux and the stretched exponential function with refractive index and band gap of the films are discussed. The photo-bleaching or photo-darkening behaviors are observed observably in most films, but some of the films with mean coordination number (MCN) around 2.45~2.50 are photo-stable within the accuracy of measurements. The results show that the instability of the infrared chalcogenide glasses thin films have special applications in photonics and optical communication.