在MBE外延生长的In0.8Al0.2As/In0.8Ga0.2As材料上，采用台面成型方法制备了背照射32×32元InGaAs探测器，其中心距为30 μm，并详细分析了探测器及其焦平面光电性能.结果表明，温度高于220 K时吸收层材料热激活能为0.443 eV，300 K时在所考虑的偏压范围内，暗电流主要由扩散电流、产生复合电流及其欧姆漏电流构成.对组件焦平面特性也进行了研究，并通过读出电路的变积分电容测试结构测试结果提取出积分电容上的寄生电容，在测试温度范围内约为10 fF左右.

32×32 element mesa-type back-illuminated InGaAs detector arrays were fabricated on the MBE- grown In0.8Al0.2As/In0.8Ga0.2As epitaxial materials by ICP etching. The characteristics of I-V curves, signal and noise were measured and analyzed. The results indicated that the thermal activation energy is 0.443eV at 210~300 K. By fitting with experimental data, R0A and I-V at different temperature were calculated theoretically. Mechanism of dark current was analyzed and some methods of reducing dark current were put forward. The detector arrays were In-bonded to readout integrated circuits (ROICs) and the characteristics of the FPA was measured. The result of the tested structure with different integrate capacitance indicates that the parasitical capacitance is about 10fF.