纳米压印工艺中的压印胶在固化后会发生聚合物的铰链，生成高分子聚合物，很难被一般有机溶剂清除，从而影响器件的性能。为有效去除压印残胶，提出一种利用多层掩模去除残胶的方法。 该方法首先在基片和压印胶之间沉积一层50 nm的二氧化硅作为硬掩模；接着用纳米压印工艺将光栅图形转移到压印胶上，再用干法刻蚀将光栅图形转移到基片上；最后，放入BOE (buffered oxide etchant)中漂洗数秒以去除残胶。文中总结了刻蚀底胶时间对光栅占空比的影响，对比了经过多层掩模去残胶和传统去残胶的方法处理后的光栅形貌。电镜图片结果显示，采用本文方法经过漂洗的光栅表面残胶去除干净，形貌良好，其周期约为240 nm，深度约为82 nm。实验表明，多层掩模去残胶的方法不仅能够有效地去除刻蚀残胶，同时能够避免光栅形貌的损坏。

When UV-Nanoimprint Lithography(NIL) is used in manufacturing gratings of Distributed Feedback Laser Diodes(DFB LDs), the resist often turns into a high polymer after curing and can not be eliminated completely. To eliminate the residual resist, a multi-mask layer process was demonstrated. In this process, a 50 nm SiO2 hard mask was deposited between the wafer and the UV-curable resist and then traditional nanoimprint lithography based on soft stamp UV-imprinting was executed. Following that, the Inductively Coupled Plasma(ICP) dry etching was used to transfer the pattern on the substrate. Finally, it was rinsed with Buffered Oxide Etchant(BOE)for a few seconds .The effect of etching time on the duty ratio of grating was explored and the grating morphologies processed by traditional method and proposed method were compared. A scanning electron microscope image of rinsed grating shows that the grating with about 240 nm pitch and 82 nm depth offers a clean surface and a good feature. Therefore. The proposed method not only can eliminate the residual resist effectively but also can avoid the morphologic damage.