针对大面阵CCD成像黑缺陷多的特点, 从机理和制作工艺上进行了分析研究。结果表明, CCD成像黑缺陷主要由光刻工艺缺陷引起。光刻LOCOS、地和沟阻工艺中产生的浮胶是CCD成像黑缺陷的主要来源。在制作多晶硅栅过程中, 光刻浮胶可产生成像黑缺陷或导致信号电荷转移问题。最后, 提出了减少光刻工艺产生浮胶的方法。

It is analyzed the dark defects in large-array CCD imaging from the aspects of mechanism and progress rules. The research results indicate the dark imaging defects were mainly caused by the photolithography defects, which are mainly resulted by the detaching of photoresist in the process of LOCOS, ground and channel stop patterns. In the fabrication process of polysilicon gate, the detaching of photoresist can bring the problems of dark defects or charge transfer. The methods for reducing the float photoresist are suggested.