对国产锗硅异质结双极晶体管(SiGe HBT)进行了单粒子效应激光微束辐照试验，观测SiGe HBT单粒子效应的敏感区域，测试不同外加电压和不同激光能量下SiGe HBT集电极瞬变电流和电荷收集情况，并结合器件结构对试验结果进行分析。试验结果表明：国产SiGe HBT位于集电极/衬底结内的区域对单粒子效应敏感，波长为1064 nm的激光在能量约为1.5 nJ时诱发SiGe HBT单粒子效应，引起电流瞬变。入射激光能量增强，电流脉冲增大，电荷收集量增加；外加电压增大，电流脉冲的波峰增大；SiGe HBT的单粒子效应与外加电压大小和入射激光能量都相关，电压主要影响瞬变电流的峰值，而电荷收集量主要依赖于入射激光能量。

This paper discusses singleevent effect (SEE) on SiGe heterojunction bipolar transistors (SiGe HBTs) using laser microbeam irradiation test. Our work observes the sensitive volume in SiGe HBTs, and measures the transient current and charge collection of the collector for different voltage and different laser energy. Then, the experimental phenomena are analyzed according to the device structure. The results show that SiGe HBTs are susceptible to SEE, the 1064 nm laser of about 1.5 nJ energy causes SEE by transient current. The region within collector/substrate (C/S) junction is the sensitive volume of the domestic SiGe HBTs. As the incident laser energy enhances, the current pulse increases, and the amount of charge collection rises. The crest of the current pulse increases when the applied voltage is increased. SiGe HBT singleevent effect is affected by both voltage and laser energy. Applied voltage mainly affects the peak of transient current; however, charge collection is strongly dependent on the energy of incident laser.