液晶与显示, 2013, 28 (4): 471, 网络出版: 2013-08-28
搭桥晶粒多晶硅薄膜晶体管
Bridged-Grain Polycrystalline Silicon Thin-Film Transistors
摘要
提出了一种薄膜晶体管的新结构。这种新结构充分发挥了短沟道效应和多结效应的优点。通过器件模拟, 验证了此种器件结构的物理机制。通过应用这种新结构, 薄膜晶体管的阈值电压、伪亚阈值斜率、开关电流比和场效应迁移率都大幅改善, 并且器件的热载流子和自加热可靠性也得到了极大的改善。
Abstract
A new structure for thin-film transistors is proposed and demonstrated, exhibiting the benefits but not the drawbacks of both short-channel and multi-junction effects. Simulations are performed to verify the physics of this device structure. All characteristics such as threshold voltage, pseudo subthreshold slope, on-off current ratio and field-effect mobility are improved. Furthermore, device hot carrier and self-heating reliability are also improved by this new structure.
郭海成, 周玮, 陈荣盛, 赵淑云, 张猛, 王文, 陈树明, 周南云. 搭桥晶粒多晶硅薄膜晶体管[J]. 液晶与显示, 2013, 28(4): 471. KWOK Hoi-Sing, ZHOU Wei, CHEN Rong-sheng, ZHAO Shu-yun, ZHANG Meng, WONG Man, CHEN Shu-ming, CHOW Thomas. Bridged-Grain Polycrystalline Silicon Thin-Film Transistors[J]. Chinese Journal of Liquid Crystals and Displays, 2013, 28(4): 471.