针对90 nm和65 nm DDR(双倍数率)SRAM器件，开展与纳米尺度SRAM单粒子效应相关性的试验研究。分析了特征尺寸、测试图形、离子入射角度、工作电压等不同试验条件对单粒子翻转(SEU)的影响和效应规律，并对现有试验方法的可行性进行了分析。研究表明:特征尺寸减小导致翻转截面降低，测试图形和工作电压对器件单粒子翻转截面影响不大；随着入射角度增加，多位翻转的增加导致器件SEU截面有所增大；余弦倾角的试验方法对于纳米器件的适用性与离子种类和线性能量转移(LET)值相关，具有很大的局限性。

Single event effect experimental study on 90 nm and 65 nm DDR SRAM were carried out, single event upset (SEU) cross section was discussed as a function of several parameters such as feature size, test pattern, incidence angle, supply voltage. Key influence factors and effect rule were analyzed. Feasibility of the current test method was discussed. Results indicate that, SEU cross section reduces as technologies scale down; the influence of test pattern and power supply on SEU cross section is small; tilt angle increases SEU cross section due to the increase of multiple upset. The applicability of cosine tilt test method is correlative to ion species and linear energy transfer (LET) values.