中国激光, 2013, 40 (11): 1102004, 网络出版: 2013-10-20
980 nm半导体激光器腔面温度特性分析 下载: 561次
Analysis of Temperature Characteristics of 980 nm Semiconductor Laser Facet
激光器 半导体激光器 光学灾变损伤 腔面温度 金刚石 lasers semiconductor lasers catastrophic optical damage facet temperature diamond
摘要
研究分析了980 nm半导体激光器的腔面温度特性。半导体激光器腔面光学灾变损伤(COD)是限制器件寿命和高功率输出的主要因素,通过分析腔面热源,建立腔面温度分布模型,分析了腔面温度场分布。设计了以金刚石为钝化膜的腔面增透膜和高反膜,模拟和对比了镀有金刚石钝化膜与未镀金刚石钝化膜的980 nm半导体激光器腔面温度特性。分析结果表明,镀有金刚石钝化膜比未镀金刚石钝化膜的器件的腔面温度低9.0626 ℃。因此在980 nm半导体激光器腔面镀金刚石钝化膜能够有效降低腔面温度,提高腔面COD阈值。
Abstract
Temperature characteristics of 980 nm semiconductor laser facet are analyzed. Catastrophic optical damage (COD) of semiconductor laser facet is the main reason which limits the lifetime and output power of laser. Through analyzing the heat source produced by facet, the model of facet temperature distribution is established and facet temperature field distribution is analyzed. Antireflection film and high reflection film with diamond passivation film are designed to simulate and contrast facet temperature characteristics of 980 nm semiconductor lasers with and without diamond passivation film. Simulation results show that the temperature of the former is lower than the latter of 9.0626 ℃. It can effectively reduce the facet temperature and improve the COD threshold of 980 nm semiconductor laser when coated with diamond passivation film.
郑晓刚, 李特, 芦鹏, 曲轶, 薄报学, 刘国军, 马晓辉, 李再金. 980 nm半导体激光器腔面温度特性分析[J]. 中国激光, 2013, 40(11): 1102004. Zheng Xiaogang, Li Te, Lu Peng, Qu Yi, Bo Baoxue, Liu Guojun, Ma Xiaohui, Li Zaijin. Analysis of Temperature Characteristics of 980 nm Semiconductor Laser Facet[J]. Chinese Journal of Lasers, 2013, 40(11): 1102004.