红外技术, 2013, 35 (9): 527, 网络出版: 2013-10-23
微光像传感器技术的最新进展
New Development of Low Light Level Imaging Sensor Technology
微光夜视 像增强器 像传感器 CCD和 CMOS混合 LLL night vision image intensifier LLL image sensor LLL CCD/CMOS LLLCCD/CMOS CCD and CMOS hybrid EMCCD EMCCD ICCD/CMOS ICCD/CMOS EBCCD EBCCD EBAPS EBAPS InGaAs InGaAs
摘要
在回顾微光像传感器的发展历程、现状和跟踪最近 10年的发展轨迹的基础上, 提出了确定新一代微光像传感器的原则和发展方向。并重点介绍了微光像传感器的最新进展。包括, 带有前置增强级的 CCD/CMOS, 如增强 CCD/CMOS、电子轰击 CCD/COMS。固体微光 CCD/CMOS、CCD和 CMOS混合微光像传感器、电子倍增 CCD, 铟镓砷短波红外微光像传感器。
Abstract
Based on the review of the development course, status of LLL image sensor, and tracking the development path of LLL image sensor in the near 10 years, this paper proposes the determination principle of a new generation of LLL image sensor and development direction. It also focuses on the latest progress of LLL image sensor including the CCD/CMOS with pre-intensified stage, such as the ICCD/CMOS and the EBCCD/COMS, solid-state LLL CCD/CMOS image sensor, CCD/CMOS hybrid image sensor, EMCCD, and InGaAs short wave infrared image sensor.
田金生. 微光像传感器技术的最新进展[J]. 红外技术, 2013, 35(9): 527. TIAN Jin-sheng. New Development of Low Light Level Imaging Sensor Technology[J]. Infrared Technology, 2013, 35(9): 527.
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