激光与光电子学进展, 2013, 50 (12): 122502, 网络出版: 2013-11-13
高亮度大功率宽条形半导体激光器腔面氮氢钝化研究
Research of High Brightness and High Power Broad Area Semiconductor Lasers with Nitrogen-Hydrogen Passivation
光电子学 高亮度大功率半导体激光器 等离子体 腔面钝化 optoelectronics high brightness high power semiconductor laser plasma cavity passivation AlN AlN
摘要
提升宽条形半导体激光器腔面抗光学灾变（COD）能力，改善宽条形半导体激光器的输出工作特性，一直是高亮度大功率宽条形半导体激光器器件工艺研究的核心。基于氮氢混合气体的等离子体反应钝化原理，通过AlN高效导热薄膜作为腔面钝化保护层，实现器件最大输出功率提高达66.7%；连续电流工作时，3.5 W功率输出的情况下，其千小时退化率小于0.73%。
Abstract
It is the most important core for high brightness high power semiconductor lasers to improve the resistance to catastrophic optical damage (COD) and output operation characteristic of broad area laser diodes (LDs). According to the sputter-reaction theory of passivation with nitrogen-hydrogen plasma, and using high thermal heat-conduction AlxNy film to protect the passivated cavity, peak output power has increased by 66.7% for the new device. The aging speed of the LDs is less than 0.73% per 1000 h when they are working under continuum current operation with the output power of 3.5 W.
乔忠良, 张晶, 芦鹏, 李辉, 李特, 李林, 高欣, 曲轶, 刘国军, 薄报学. 高亮度大功率宽条形半导体激光器腔面氮氢钝化研究[J]. 激光与光电子学进展, 2013, 50(12): 122502. Qiao Zhongliang, Zhang Jing, Lu Peng, Li Hui, Li Te, Li Lin, Gao Xin, Qu Yi, Liu Guojun, Bo Baoxue. Research of High Brightness and High Power Broad Area Semiconductor Lasers with Nitrogen-Hydrogen Passivation[J]. Laser & Optoelectronics Progress, 2013, 50(12): 122502.
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