在研究新型高效GaAs基三结和四结太阳电池过程中，研究者努力寻找一种既满足能隙约为1eV，同时又与GaAs衬底晶格匹配的半导体材料。通过调节组分，GaInNAs可同时满足上述两个特性，因此GaInNAs被认为是制备新型高效多结GaAs基太阳电池的理想材料。但实际上，制备高晶体质量GaInNAs材料十分困难，造成所制备的器件性能低下，未能达到实际要求。探讨了导致GaInNAs材料生长困难的机理，并对当前GaAs基GaInNAs太阳电池材料的研究历程和技术现状进行了概述。在此基础上，展望了GaInNAs技术的未来走向。

For studying new triplejunction or fourjunction GaAsbased solar cells, researchers are trying to seek a material that has a band gap of about 1eV and its lattice matches with GaAs substrate. By adjusting the components, GaInNAs can obtain the above two features simultaneously. Therefore, GaInNAs is thought to be an ideal material for making new multijunction GaAsbased solar cells. Practically, however, it is rather difficult to obtain highquality GaInNAs solar cells, resulting in inefficient properties of the devices. In this review, the reasons for the difficulties in the growth of GaInNAs material are discussed in detail, and the research processes and development status are introduced as well as the future directions of GaAsbased GaInNAs solar cells are prospected.