提供了一种硅纳米墙结构器件的背面电极接触改善方法。通过利用超声的方法修饰金属催化法制备的硅纳米墙结构,并制备了AZO／硅纳米墙异质结光电器件。研究发现超声波可以对金属催化法制备的纳米硅墙进行单面修饰,与未经超声修饰的样品制备的器件相比,超声修饰能够改善硅纳米墙器件的背面电极欧姆接触,2 min的超声修饰可以将器件的串联电阻从587 Ω下降到082 Ω,填充因子提高86％,光电转换效率提高762％,提高了光电器件的载流子收集效率。

A new method to improve the silicon nano-wall optoelectronic device’s back ohmic contact by ultrasonic is proposed. The metal assisted etching of silicon nano-wall samples with ultrasonic is modified, then ultrasonic modified silicon nano-wall is built into AZO/silicon nano-wall hetero-junction optoelectronic device . It is found that the ultrasonic can polish one side of metal assisted chemical etching silicon nano-wall sample.Compared to the non ultrasonic modified sample, ultrasonic modified process can improve the back ohmic contact of silicon nano-wall device. The series resistance can be reduced from 5.87 Ω to 0.82 Ω by 2 minutes of ultrasonic modification and the fill factor is raised to 86%,and the photoelectric conversion efficiency to 76.2%. The device’s carrier collection efficiency is thus improved.