设计了一种由12只单条形芯片分为2组以从高到低阶梯排列的百瓦级半导体激光器结构。针对其在稳态工作条件下的热特性利用ANSYS软件进行了模拟分析，通过改变Cu热沉的宽度、间距和高度差，得到了最高和最低Cu热沉封装的芯片有源区温度及两者温度差值的变化规律。最后设计了一种较为理想的百W级半导体激光器的散热结构。

A hundred-watt semiconductor laser packaged with 12 single strip-type chips divided into 2 groups where each group was set from high to low in ladder form was designed, and its thermal characteristics under steady-state work were analyzed by ANSYS. The temperature of active region of chip packaged with the highest and the lowest Cu heat sinks was obtained by changing the width, spacing and height difference of Cu heat sink, and thus the change rules of the temperature difference were derived. Finally, we designed a relatively ideal heat dissipation structure for hundred-watt semiconductor laser.