在点源热脉冲传热模型的理论基础上，采用格林函数法建立了由于单个杂质缺陷吸收引起的温度场模型，得到了杂质附近温度场的解析表达式，分析了激光脉冲参数对温度场的影响情况，并在单个杂质吸收的理论基础上推导得到KDP晶体某一区域内含多个杂质吸收的模型。结果表明杂质吸收引起的温度变化与激光脉冲参数密切相关。当杂质间距离小于激光持续时间内产生的热扩散距离时，就会引起杂质间温度场的叠加，并且当杂质密度大到一定程度时，会使杂质团区域的温升加剧，导致晶体发生激光诱导损伤的可能性加大。

The analytical expression of temperature field around inclusion is obtained by establishing the model of temperature field due to the absorption of the single impurity defect in the KDP crystal using Green′s function method based on the theoretical solution of the point source heat transfer model. The influence of pulsed laser parameters on the temperature fieldis analyzed and the model of multi-inclusions absorption in the certain area of KDP crystal is obtained based on the single impurity defect absorption theory. The results show that the temperature variation caused by the inclusion absorption is closely related to the parameters of the pulsed laser. When the distance among the inclusions is less than the thermal diffusivity length in the duration of laser pulses, it will lead to the cumulative effect of temperature field. If the density of the inclusions is large enough, the temperature around the inclusion group will rise rapidly, which will enlarge the possibility of laser induced damage for crystals.