激光与光电子学进展, 2014, 51 (2): 022202, 网络出版: 2014-01-17
日盲紫外探测系统研究 下载: 2018次
Research of Solar Blind Ultraviolet Detection System
光学设计 日盲紫外 紫外探测 紫外告警 光学系统 optical design solar blind ultraviolet ultraviolet detection ultraviolet alarm optical system
摘要
日盲紫外探测系统因工作在日盲区而具有独特的探测优势,在民用和**领域得到了广泛的关注,尤其在导弹告警领域的应用显示了无与伦比的优越性。研究了紫外导弹告警的原理及优势,分析了紫外告警成像系统的关键技术;针对紫外导弹告警系统的应用需求,制定了日盲紫外光学系统的设计指标,分析了光学系统初始结构的选取方法,根据像差理论合理分配光学系统的光焦度,运用光学设计软件Zemax进行了系统的优化设计和像质评价,最后设计完成了一款焦距f′=150 mm,相对孔径1∶3,视场2w=±4°的日盲紫外光学系统。系统共用了5片透镜,总长160 mm,各视场能量集中度在增强型电荷耦合器件(ICCD)的像素尺寸(25 mm)内均大于90%,光学传递函数在奈奎斯特频率(20 lp/mm)处高于0.7,具有成像质量优异、结构简单紧凑的特点和很高的实际应用价值。
Abstract
Solar blind ultraviolet (UV) detection system has attracted widespread attention in both civil and military fields because of its unique advantages in detection, especially its incomparable superiority in missile warning field. The principle and advantages of UV warning system and the key technology of UV detection system are analyzed. The design indices of solar blind UV optical system are determined according to the application requirement of UV warning system. Based on the analysis of selection method of initial structure, the optical power is assigned according to the aberration theory. Then the optical design software Zemax is used to optimize the initial structure and evaluate the image quality. A solar blind UV optical system with the focal length of 150 mm, relative aperture of 1∶3 and field of view of ±4° is finally designed. The result shows that the encircled energy is higher than 90% in a pixel size (25 mm) of intensified charge-coupled device (ICCD), and the modulation transfer function (MTF) is higher than 0.7 at the Nyquist frequency (20 lp/mm). All of the data satisfy the design requirement. The system is highly valuable because of its characteristics of excellent imaging quality, compact configuration and light weight.
王保华, 李妥妥, 郑国宪. 日盲紫外探测系统研究[J]. 激光与光电子学进展, 2014, 51(2): 022202. Wang Baohua, Li Tuotuo, Zheng Guoxian. Research of Solar Blind Ultraviolet Detection System[J]. Laser & Optoelectronics Progress, 2014, 51(2): 022202.