光散射学报, 2008, 20 (4): 338, 网络出版: 2014-01-21
激光加热效应在硅显微Raman光谱测量中的影响
The Influence of Laser Heating in Silicon Micro-Raman Measurement
摘要
本文从理论和实验两方面研究了显微Raman光谱测量中, 激光功率对单晶硅样品测量的影响。由于显微Raman光谱仪对激光的聚焦作用, 使得激光对不同厚度的样品具有微区加热作用, 被测样品产生不同程度的温升, 从而对显微Raman光谱仪在硅材料应力和温度的测量中产生影响。实验结果证明, 对无限厚硅样品, 20 mW的激光使Raman频移达到0.15 cm-1;而对2 μm厚的热薄硅样品, 26 mW的激光使Raman频移达到4.47 cm-1。
Abstract
This paper presents theoretically and experimentally the influence of laser heating in Silicon Micro-Raman measurement. The local temperature rise induced by focused laser introduces errors in the stress or temperature measurement of Silicon samples. The experiment results shows that the Raman shifts of semi-infinite and thermal thin Silicon sample reach 0.15 cm-1 and 4.47 cm-1 under laser irradiation of 20 mW and 26 mW respectively.
伍晓明, 郁鉴源, 任天令, 刘理天. 激光加热效应在硅显微Raman光谱测量中的影响[J]. 光散射学报, 2008, 20(4): 338. WU Xiao-ming, Yu Jian-yuan, REN Tian-ling, LIU Li-tian. The Influence of Laser Heating in Silicon Micro-Raman Measurement[J]. The Journal of Light Scattering, 2008, 20(4): 338.