提出了一种高速门控盖格模式的铟镓砷/铟磷雪崩光电二极管（InGaAs/InP APD）单光子探测技术。将1.5 GHz多次谐波超短脉冲加载到InGaAs/InP APD上，盖革模式下的光生雪崩信号埋藏在短脉冲充放电形成的噪声中，采用700 MHz低通滤波器实现了50.6 dB的噪声抑制比，有效地提取出了雪崩信号。通过半导体制冷，使InGaAs/InP APD工作在-30 ℃，1.5 GHz短脉冲驱动下的InGaAs/InP APD在1550 nm的探测效率为35%，暗计数率为每门6.4×10-5，超过了单纯使用1.5 GHz正弦门的探测性能，而且在15%的探测效率下，2.7 ns后发生后脉冲的概率仅为每门6.0×10-5。

A high-speed single-photon detection technique based on gated InGaAs/InP avalanche photodiode (APD) is proposed. The 1.5 GHz harmonics ultrashort pulse is applied to an InGaAs/InP APD, and the photo-excited avalanche signal is buried in the harmonics noise due to the capacitive response of APD. By utilizing a 700 MHz low-pass filter, we achieve 50.6 dB noise suppression and extract the avalanche signal efficiently. With the InGaAs/InP APD operated under -30 ℃ by thermal electrical cooler, and driven by 1.5 GHz harmonics ultarshort pulse gating, a detection efficiency of 35% at 1550 nm with the dark count probability of 6.4×10-5 per gate is obtained, and the afterpulse probability is 6.0×10-5 per gate after 2.7 ns at the detection efficiency of 15%.