激光与光电子学进展, 2014, 51 (3): 032301, 网络出版: 2014-03-03
InGaN/GaN超晶格垒层用于InGaN发光二极管发光增强研究 下载: 709次
Research on Efficiency Improvement of InGaN Light-Emitting Diodes with InGaN/GaN Superlattice Barrier
发光二极管 超晶格垒层 数值模拟 InGaN/GaN InGaN/GaN light-emitting diodes superlattice barrier numerical simulation
摘要
设计了InGaN/GaN 超晶格垒层替代p-GaN 和n-GaN 附近传统GaN 垒层的InGaN/GaN 多量子阱(MQW)发光二极管(LEDs)结构。通过数值方法模拟出两种LED 结构的光功率-电压(L-V)曲线、电致发光(EL)谱、能带图、电子浓度分布和辐射复合速率。结果表明InGaN/GaN 超晶格替代n-GaN 附近GaN 垒层的LED 结构比替代p-GaN 附近GaN 垒层的LED 显示出更高的发光强度。这种发光增强的原因是InGaN/GaN 超晶格替代n-GaN 附近GaN 垒层可以提高电子注入效率和辐射复合速率。
Abstract
InGaN/GaN superlattice (SL) barrier near p- GaN and n- GaN are designed to replace the conventional GaN barrier of InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs). The lightvoltage performance curves, electroluminescence (EL) characteristics, energy band diagrams, electron concentration and radiative recombination rate of LEDs with SL barrier near p- GaN and n- GaN have been studied numerically. The results indicate that the InGaN/GaN LED with SL barrier near n- GaN improves light output performance mane than that near p- GaN. The improved performance is due to the enhanced injection efficiency of electrons and radiative recombination rate.
杨国锋, 朱华新, 郭颖, 李果华, 高淑梅. InGaN/GaN超晶格垒层用于InGaN发光二极管发光增强研究[J]. 激光与光电子学进展, 2014, 51(3): 032301. Yang Guofeng, Zhu Huaxin, Guo Ying, Li Guohua, Gao Shumei. Research on Efficiency Improvement of InGaN Light-Emitting Diodes with InGaN/GaN Superlattice Barrier[J]. Laser & Optoelectronics Progress, 2014, 51(3): 032301.