强激光与粒子束, 2014, 26 (4): 045049, 网络出版: 2014-04-24   

不同微槽结构绝缘子真空沿面闪络特性

Characteristics of grooved insulator flashover under pulsed voltage
作者单位
中国工程物理研究院 流体物理研究所, 脉冲功率科学与技术重点实验室, 四川 绵阳 621900
摘要
针对单极性脉冲电压下不同微槽结构绝缘子真空沿面闪络特性开展实验研究。根据二次电子运动特性,设计了多种微槽宽度,对比了微槽结构和平面结构的绝缘子耐压特性差异。槽宽为1 mm的微槽样品耐压水平与平面结构样品耐压水平相当,槽宽小于1 mm的样品组耐压水平均高于平面结构样品,最高电压提高倍数约为1.4,说明一定尺寸范围内的微槽设计将提高绝缘子真空耐压水平。通过电场强度计算分析微槽结构对二次电子运动的影响过程可知,较大的微槽宽度可使电子限制在槽内运动,较小的微槽宽度将抑制初始电子的发展,最终二者都能达到抑制闪络的目的。通过显微镜观测各组样品表面特征,材料表面微观缺陷将可能降低材料耐压水平。
Abstract
The characteristics of grooved insulator flashover under pulsed voltage are discussed in this paper. The groove widths are determined by the secondary electron emission trajectory. The experiments results show that the flashover voltages increased while the insulator samples with 0.05 mm, 0.1 mm, or 0.7 mm wide grooves were used and the biggest voltage multiple was 1.4. The samples with 1 mm wide grooves had the same flashover voltage level as the flat ones. It is concluded that proper grooves design could increase the insulator flashover level by preventing the development of the secondary electron emission avalanche. Mechanism of inhibition was analyzed with calculation of electric field strength on the surface of insulator. Wider grooves, would trap the electrons and narrower ones would inhibit the motion of the initial electrons. Comparing the samples surface micrograms, a conclusion was given that the surface micro-flaw would drop the insulator flashover level.

李逢, 王勐, 任靖, 方东凡, 康军军, 徐乐, 杨尊. 不同微槽结构绝缘子真空沿面闪络特性[J]. 强激光与粒子束, 2014, 26(4): 045049. Li Feng, Wang Meng, Ren Jing, Fang Dongfan, Kang Junjun, Xu Le, Yang Zun. Characteristics of grooved insulator flashover under pulsed voltage[J]. High Power Laser and Particle Beams, 2014, 26(4): 045049.

本文已被 1 篇论文引用
被引统计数据来源于中国光学期刊网
引用该论文: TXT   |   EndNote

相关论文

加载中...

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!