通过沉积SiNx薄膜和H2退火表面处理工艺对低成本多晶硅太阳电池进行了处理, 对表面处理前后的电池效率进行了对比测试, 详细地研究了这两种表面处理工艺对电池的短路电流、开路电压、填充因子和转换效率的影响。实验发现, 沉积了SiNx薄膜的低成本多晶硅太阳电池的效率在原有基础上提高了1.8%左右; 而经过H2退火后的电池效率则出现了效率衰减。与此同时, 对成本相对高的太阳能级多晶硅电池也进行了H2退火, 与低成本多晶硅电池相比, 其效率增加明显, 与低成本太阳电池呈现了相反的现象。最后分析了两种表面处理工艺对电池性能造成影响的原因。

Two surface processing methods, which includes depositing SiNx thin film on the cells and annealing the cells in H2, were carried out on low-cost multi-crystalline silicon solar cells. The efficiency of the solar cells was tested before and after the surface processing. And the effects of the two surface processing methods on the short-circuit current, open-circuit voltage, fill factor and efficiency were carried out in this paper. The results show that the efficiency of the low-cost solar cells is improved by 1.8% after depositing SiNx thin film on the cells, but after H2 annealing, the efficiency is degraded. And high-cost solar-graded multi-crystalline silicon solar cells are also annealed in H2 atmosphere, but its efficiency increases, which shows different tendency compared to low-cost multi-crystalline silicon solar cells. Finally the factors resulting in different effects by the two methods are analyzed and discussed.