利用半导体材料波长易调节的特点, 设计了AlGaInAs/GaAs/AlGaAs压应变量子阱结构, 得到760、800、860、930和976nm 5个波长激射的半导体列阵激光器, 同时设计了4个短波通滤波片参数, 开展了半导体列阵激光器的多波长光束复合技术的实验研究, 最终实现了5个波长的半导体列阵激光器的光束复合, 得到112W的激光功率输出, 总体效率为88.5%, 其中波长复合效率达92.4%, 输出聚焦光斑尺寸为136μm×1330μm, 聚焦光功率密度达6.43×104W/cm2。

Making use of the characteristic of adjustable wavelength of semiconductor materials, AlGaInAs / GaAs / AlGaAs compressive strain quantum well structure was designed and the diode arrays with different wavelength of 760, 800, 860, 930 and 976nm were fabricated. And also four kinds of edge-band filters and one set of collimating system were designed. Then the five different beams were multiplexed and the laser power of 112W with the total efficiency of 88.54% is obtained. And the focused spot and the focus optical power density are measured to be 136μm×1330μm and 6.43×104W/cm2, respectively.