采用晶格匹配的平面型InP/In0.53Ga0.47As/InP外延材料,设计了一种大光敏元、带有保护环的InGaAs线列探测器。通过I-V测试、扫描电容显微技术(SCM)测试,研究并确定了线列器件的盲元与保护环结构之间的关系。通过设计改进,解决了器件的盲元问题。24×1 InGaAs线列短波红外探测在室温20 ℃、-10 mV偏压下,暗电流密度约5 nA/cm2。将光敏芯片密封在集成了热电制冷器(TEC)的金属管壳内,组件工作温度5 ℃,探测器响应光谱在1.0 μm~1.67 μm范围,平均峰值电流响应率为1.3 A/W,平均峰值探测率为3.4×1012 cm·Hz1/2/W,响应的非均匀性为1.5%。探测器经历一定条件的可靠性筛选试验后,性能未发生明显变化,并进行了航空机载成像应用,成像图片清晰。

A planar-type InGaAs linear detector with guard-ring structure and large element is designed based on InP/In0.53Ga0.47As/InP, which is lattice-matched to InP substrate. The I-V characteristics and scanning capacitance microscopy (SCM) results make sure that the bad elements have relation to the structure of the guard-ring. Then, the structure of the guard-ring is optimized, and the problem about bad elements are solved. The dark current density is about 5 nA/cm2 at -10 mV, 20 ℃. The chip is sealed in metal package with thermal electrical cooler (TEC). At the temperature of 5 ℃, the relative spectral response is in the range of 1.0 μm to 1.67 μm. The mean peak responsivity is 1.3 A/W and the mean peak detectivity is 3.4×1012 cm·Hz1/2/W. The response non-uniformity is about 1.5%. The performance of the detector does not change after several reliable experiments. At last, the detector is used to a scanning system with good image.