对FFS-TFT制作工艺中，与氮化硅膜层接触的透明电极ITO发生的雾状不良进行分析研究。通过扫描电子显微镜、宏观/微观显微镜和背光源测试设备对样品进行分析。结果显示接触层的等离子体界面处理对ITO的透过率和膜质特性有较大影响，可导致严重的雾状不良发生和刻蚀工艺中的膜层下端过度刻蚀的问题。通过在透明电极ITO上面沉积微薄的过渡缓冲膜层，并优化界面等离子体处理条件，可以改善雾状不良。

Silicon nitride thin films(SiNx) were deposited on the transparent conductive indium-tin-oxide (ITO)films by plasma enhanced chemical vapor deposition (PECVD)，and was used in fabricating the fringe field switching thin film transistors.The defect of haze mura on the ITO films were studied.The obtained samples were characterized by scanning electron microscopy (SEM), Macro Scope/Micro Scope inspection system (M/M)and BLU Electro-optical Measure System.The result showed that the SiNx film surface plasma treatment played an important role in ITO transparence and film character, which can cause haze mura and undercut issue about dry etch process. The defect of haze mura can be improved by deposited thinner SiNx buffer layer and optimized surface plasma treatment.