介绍利用大功率半导体激光器作为温度发生装置, 发出脉冲激光使被校准热电偶表面产生准阶跃温度变化的信号, 用响应速度快的红外探测器和响应慢的被校准热电偶同时对此温度变化信号进行探测, 最终以前者测得的值作为真值来校准后者的新的动态校准系统。为了能够测试响应速度快的热电偶, 需要测试温度发生装置的响应时间, 因此提出了选用响应速度快的光敏二极管作为光电探测器件, 通过搭建测试电路, 获得激光器上升时间的测试方法。并针对波长为980 nm的大功率半导体激光器进行测试, 给出测试结果。试验表明, 该半导体激光器的上升时间为纳秒级别, 可以实现对时间常数为微秒级别热电偶的动态校准。

A high power semiconductor laser as the temperature-generating device is introduced. The laser pulse is sent out from the laser to generate a quasi-step temperature change signal on the calibrated thermocouple surface. The signal is detected simultaneously by a fast response infrared detector and a slow response calibrated thermocouple. The former value is used as the true value to calibrate the new dynamic calibration system of the latter. For test the fast response thermocouple, the response time of the temperature-generating device is needed to be calibrated. Thus a fast response photodiode is chosen as a photoelectric detector. A test method of the rise time of the laser is obtained through building a test circuit. And a high power semiconductor laser with 980 nm is tested and the results are given. Experiments show that the rise time of the high power semiconductor laser is at nanosecond level and the dynamic calibration of the thermocouple with time constant at microsecond level can be realized.