首页 > 论文 > 光学 精密工程 > 22卷 > 5期(pp:1129-1137)

集成封装发光二极管光提取效率的计算及优化

Calculation and optimization of light extraction efficiency for integrated LED

  • 摘要
  • 论文信息
  • 参考文献
  • 被引情况
  • PDF全文
分享:

摘要

基于蒙特卡罗方法模拟、计算并分析了芯片类型、大小、间距、数量以及布局对GaN 基发光二极管(LED) 集成封装器件COB(Chip On Board)能效的影响。计算结果表明:在芯片间距小于200 μm且芯片尺寸或布局等参数相同的条件下,正装LED COB的能效最低,其次为倒装LED COB,垂直结构芯片的能效最大。当芯片间距大于200 μm,3种LED COB的能效趋向饱和。芯片尺寸增加或数量减少可使正装和倒装芯片COB的能效上升,而垂直结构COB的能效基本保持不变。加入图形衬底可提高同样尺寸或布局的正装芯片COB封装器件的能效,但使倒装芯片COB的能效恶化。分析表明:芯片的侧面出光量占整个芯片出光量的比值以及相邻芯片材料的吸收对3种类型COB封装器件的能效有决定性影响。文中还针对正装芯片COB设计了新型菱形芯片布局,与常规正方形芯片布局的COB相比,其能效提高了6.2%。

Abstract

On the basis of Monte Carlo simulation, the influence of chip types, sizes, spacing, numbers and layouts on the energy efficiency of a GaNbased Light Emission Diode(LED) integrated packaging COB(Chip On Board) device was analyzed. The calculation results show when the chip spacing is less than 200 μm while the other parameters are fixed, the faceup chip COB LED has the lowest energy efficiency, and that of the flip chip COB LED comes second and the vertical chip COB LED provides the highest energy efficiency. Moreover, each energy efficiency of these three kinds of COB LED devices tends to saturation when the chip spacing is larger than 200 μm. The increase of the chip size or the decrease of the chip amount can improve the energy efficiencies of the faceup COB LED and flip chip COB LED, while the energy efficiency of the vertical chip COB LED keeps almost a constant. The substrate patterning can improve the energy efficiency of faceup chip COB device with the same size or layout, however it deteriorates that of the flip chip COB device. It is concluded that the percentage of the light emitted from the side surface of the chip and the materialabsorption among adjacent chips have a decisive influence on the energy efficiency of the three types of COB packaging devices. As for faceup chip COB LED, a diamondshaped layout of the chips was presented, and the simulation result shows that the energy efficiency can be increased by 6.2% as compared with that of conventional square chip layout.

Newport宣传-MKS新实验室计划
补充资料

中图分类号:TN312.8

DOI:10.3788/ope.20142205.1129

所属栏目:现代应用光学

基金项目:国家科技支撑计划资助项目(No.2011BAE01B07,No.2012BAE01B03);国家973重点基础研究发展计划资助项目(No.2012CB315605, No.2011CB301900);国家863高技术研究发展计划资助项目(No.2011AA03A112, No.2011AA03A106, No.2011AA03A105);国家自然科学基金资助项目(No.61176015, No.60723002, No.61176059, No.60977022,No.51002085);广东省科技计划资助项目(No.2011A081301003);北京市自然科学基金资助项目(No.4091001);集成光电子学国家重点联合实验室开放基金资助项目(No.IOSKL2012KF09)

收稿日期:2013-08-21

修改稿日期:2013-09-29

网络出版日期:--

作者单位    点击查看

白一鸣:清华大学 电子工程系 清华信息科学技术国家实验室(筹), 北京 100084
罗毅:清华大学 电子工程系 清华信息科学技术国家实验室(筹), 北京 100084清华大学 深圳研究生院 半导体照明实验室, 广东 深圳 518057
韩彦军:清华大学 电子工程系 清华信息科学技术国家实验室(筹), 北京 100084
李洪涛:清华大学 电子工程系 清华信息科学技术国家实验室(筹), 北京 100084

联系人作者:白一鸣(bym10@mails.tsinghua.edu.cn)

备注:白一鸣(1984-), 男, 辽宁沈阳人, 博士研究生, 2007年、2010年于辽宁大学分别获得学士、硕士学位, 主要从事半导体光电子器件方面的研究。

【1】GANASAN J R.Chip on chip(COC)and chip on board(COB)assembly on flex rigid printed circuit assemblies [J].IEEE Electronics Packaging Manufacturing, 2006, 23(1):28-31.

【2】YU H, SHANG J T, XU C, et al..Chip-on-board(COB)wafer level packaging of LEDs using silicon substrates and chemical foaming process(CFP)-made glass-bubble caps [C].International Conference on Electronic Packaging Technology & High Density Packaging, 2011, 11(7):133-136.

【3】WIERER J J, STEIGERWALD D A, KRAMES M R, et al..High-power AlGaInN flip-chip light-emitting diodes [J].Appl.Phys.Lett., 2001, 78 (22):3379-3381.

【4】WU D, WANG K, LIU SH.Enhancement of light extraction efficiency of multi-chips light-emitting diode array packaging with various microstructure arrays [C].Electronic Components and Technology Conference (ECTC), 2011:242-245.

【5】卓宁泽, 张寅, 赵宝洲, 等.LED 集成封装的一次光学设计与优化 [J].光电工程, 2013, 40 (3):129-134.
ZHUO N Z, ZHANG Y, ZHAO B ZH,et al..First optical design and optimization of LED integrated package [J].Opto-Electronic Engineering, 2013, 40 (3):129-134.(in Chinese)

【6】LI Z T, WANG Q H, TANG Y, et al..Light extraction improvement for LED COB devices by introducing a patterned leadframe substrate configuration [J].IEEE Transactions on Electron Devices, 2013, 60(4):1397-1403.

【7】屠大维, 吴仍茂, 杨恒亮, 等.LED封装光学结构对光强分别的影像 [J].光学 精密工程, 2008, 16(5):832-838.
TU D W, WU R M, YANG H L, et al..Effect of optical structure on output light intensity distribution in LED package [J].Opt.Precision Eng, 2008, 16(5):832-838.(in Chinese)

【8】马建设, 贺丽云, 刘彤, 等.板上芯片集成封装的发光二极管结构设计 [J].光学 精密工程, 2013, 21(4):904-910.
MA J SH, HE L Y, LIU T, et al..Design of optical structure for chip-on-board wafer level packaging LEDs[J].Opt.Precision Eng, 2013, 21 (4):904-910.(in Chinese)

【9】郑同场, 李炳乾, 夏正浩.阵列化互连LED模组寿命分布的蒙特卡洛模拟 [J].光电子·激光, 2011, 22(2):207-210.
ZHENG T CH,LI B Q, XIA ZH H.Monte-Carlo simulation of lifetime distribution on array interconnection of LED module [J].Journal of Optoelectronics ·Laser, 2011, 22 (2):207-210.(in Chinese)

【10】江洋, 罗毅, 汪莱, 等.柱状与孔状图形衬底对MOVPE生长GaN体材料及LED器件的影响 [J].物理学报, 2009, 58:3468.
JIANG Y, LUO Y, WANG L, et al..Influence of pillar-and hole-patterned sapphire substrates on MOVPE grown GaN bulk and LED structures [J].Acta Phys.Sin., 2009, 58:3468.(in Chinese)

【11】FUJII T, GAO Y, SHARMA R, et al..Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening [J].Appl.Phys.Lett.,2004, 84:855.

【12】PARK E H, FERGUSON I T, JEON S K, et al..InGaN-light emitting diode with high density truncated hexagonal pyramid shaped p-GaN hillocks on the emission surface [J].Appl.Phys.Lett., 2006, 89:251106.

【13】LEE S J.Analysis of light-emitting diodes by Monte Carlo photon simulation [J].Applied Optics, 2001, 40(9):1427-1437.

【14】LEE T X, GAO K F, CHIEN W T, et al..Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate [J].Opt.Express, 2007, 15(11):6670-6676.

您的浏览器不支持PDF插件,请使用最新的(Chrome/Fire Fox等)浏览器.或者您还可以点击此处下载该论文PDF