应用光学, 2014, 35 (3): 494, 网络出版: 2014-06-03   

基于双磨头的磁流变抛光机床与工艺研究

Magnetorheological finishing machine and technique based on two-polishing-head
作者单位
1 中国工程物理研究院 机械制造工艺研究所,四川 绵阳 621900
2 成都精密光学工程研究中心,四川 成都 610041
摘要
针对传统单磨头磁流变抛光技术的不足,提出了一种新的双磨头磁流变抛光方法,并研制了一台八轴数控双磨头磁流变抛光机,具备了大口径平面、非球面及连续位相板的超精密、高效率加工能力。分别研究了大、小磨头材料去除特性及面形修正能力,不仅获得了稳定、有效的大、小抛光斑,而且获得了超精的大、小平面工艺样件。50 mm小平面经小磨头一次连续抛光,在45 mm内其面形精度PV由0.21 λ收敛至0.08 λ、RMS由0.053 λ收敛至0.015 λ;430 mm×430 mm大平面经大磨头3次迭代抛光,在410 mm×410 mm内其面形精度PV由0.4 λ收敛至0.1 λ、RMS由0.068 λ收敛至0.013 λ。由此表明,所研制的双磨头磁流变抛光机床具有较好的材料去除特性和较强的面形修形能力。
Abstract
Aiming at some deficiencies of traditional one-polishing-head magnetorheological finishing (MRF) technique, a new two-polishing-head MRF method was studied and a two-polishing-head computer controlled MRF machine with 8 axes was developed . The machine has the ability to produce large aperture flat, asphere and continuous phase plate with high figure accuracy and high material removal rate . Material removal characteristic and figure correction ability for each of large and small polishing heads were studied. Each of two heads individually acquired stable and valid polishing removal function and ultra-precision flat sample . After a single polishing iteration using small polishing head , the figure error peak value(PV) in 45 mm diameter of a 50 mm diameter small plano optics significantly improved from 0.21 λ to 0.08 λ (0.053 λ to 0.015 λ root-mean-square). After three polishing iterations using large polishing head,the figure error in 410 mm×410 mm of a 430 mm×430 mm large plano optics significantly improved from 0.40 λ to 0.10 λ PV (0.068 λ to 0.013 λ RMS). These results show that the two-polishing-head MRF machine has good material removal stability and excellent figure correction capability.

黄文, 张云飞, 郑永成, 罗清, 侯晶, 袁志刚. 基于双磨头的磁流变抛光机床与工艺研究[J]. 应用光学, 2014, 35(3): 494. HUANG Wen, ZHANG Yun-fei, ZHENG Yong-cheng, LUO Qing, HOU Jing, YUAN Zhi-gang. Magnetorheological finishing machine and technique based on two-polishing-head[J]. Journal of Applied Optics, 2014, 35(3): 494.

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