强激光与粒子束, 2014, 26 (5): 051022, 网络出版: 2014-06-03
非对称结构大功率940 nm量子阱激光器
High power 940 nm quantum well laser with asymmetric structure
量子阱激光器 大功率 非对称结构 金属有机物化学气相沉积 quantum well laser high power asymmetric structure InGaAs/GaAs InGaAs/GaAs metal organic chemical vapor deposition
摘要
为改善940 nm大功率InGaAs/GaAs半导体激光器输出特性，通过模拟计算了非对称波导层及限制层结构的光场分布，并参照模拟制作了非对称结构半导体激光器器件。采用低压金属有机物气相沉积（LP-MOCVD）生长技术，获得了低内吸收系数的高质量外延材料，通过实验数据计算得到激光器材料内吸收系数仅为0.44 mm-1。进而通过管芯工艺制作了条宽100 μm、腔长2000 μm的940 nm半导体激光器器件。25 ℃室温10 A直流连续（CW）测试镀膜后器件阈值电流251 mA，斜率效率1.22 W/A，最大输出功率达到9.6 W，最大光电转化效率超过70%。
Abstract
In order to improve the performance of the general broad area high power 940 nm InGaAs/GaAs semiconductor laser diode (LD), we design a new type quantum well LD with an asymmetric waveguide and cladding structure. High material quality with low internal loss of 0.44 mm-1 has been achieved using low pressure metal organic chemical vapor deposition (LP-MOCVD) method. Broad-area lasers were fabricated with the wafers grown on GaAs substrates. For the 940 nm devices with 100 μm-wide stripe and 2000 μm-long cavity under 25 ℃ continuous wave (CW) operation condition of 10 A, the typical threshold current is 251 mA, the slope efficiency is 1.22 W/A , and the maximum output power reaches 9.6 W. The laser diode yielded a maximum power conversion efficiency over 70%.
蒋锴, 李沛旭, 张新, 汤庆敏, 夏伟, 徐现刚. 非对称结构大功率940 nm量子阱激光器[J]. 强激光与粒子束, 2014, 26(5): 051022. Jiang Kai, Li Peixu, Zhang Xin, Tang Qingmin, Xia Wei, Xu Xiangang. High power 940 nm quantum well laser with asymmetric structure[J]. High Power Laser and Particle Beams, 2014, 26(5): 051022.
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