介绍了制备某太赫兹频率真空辐射光栅的超厚胶光刻工艺，针对工艺中的难点(大厚度和高深宽比)展开了深入分析。实验分析了基片处理、涂胶、前烘、曝光、后烘、显影等工艺过程对光刻的影响，通过优化工艺参数，解决了胶膜脱落、开裂，不同胶层间的结合，光栅沟槽间的光刻胶残留等问题，成功制备了厚度为700 μm、深宽比为14的侧壁陡直、表面平整的双光栅结构胶膜。

As a key part of terahertz vacuum electronic device, metal grating can’t be fabricated using traditional methods due to its tiny dimension. The photoetching process of metal bi-grating for radiation source at some terahertz band was presented. The influence of the procedure (including substrate preparation, spin-coating, pre-bake, exposure, post-bake and developing) on photoetching was analyzed experimentally. The problems such as film drop and crack, film’s combination and the photoresist remaining at gaps which were caused by thick film and high aspect ratio, were solved by the optimizing the process parameters. Finally, a good film microstructure with steep side wall and smooth surface was achieved, with a thickness of 700 μm and an aspect ratio of 14. The work presented in this paper provides a technological guide to the similarly related project.